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| CLX30 HiRel X-Band GaAs Power-MESFET * * * * * * * HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 500 MHz to 12.5 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 54 % Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/007, Type Variant No.s 01 to 03 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D Package CLX30-00 (ql) CLX30-05 (ql) CLX30-10 (ql) - see below G MWP-25 CLX30-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702L115 on request on request Q62702L114 (see order instructions for ordering example) Semiconductor Group 1 of 10 Draft D, September 99 CLX30 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1 Symbol VDS VDG VGS ID IG PC Values 11 13 -6 840 10 1.5 at VDS 8 V 2.5 at VDS 7 V 3.5 at VDS 6 V Unit V V V mA mA dB Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) Soldering temperature Thermal Resistance Junction-soldering point Notes.: 5) PC PC TJ Tstg Ptot Tsol 3.5 at VDS 6 V tbd. 175 - 65...+ 175 5.4 230 dB dB C C W C Rth JS 25 K/W 1) Operation Range 1: 160 mA ID 320 mA 2) Operation Range 2: ID > 320 mA 3) Operation Range 3: ID < 160 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 10 Draft D, September 99 CLX30 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol min. Values typ. max. Unit DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 24 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Transconductance VDS = 3 V, ID = 240 mA Thermal resistance Junction to soldering point VDS = 8 V, ID = 240 mA, Ts = +25C Rth JS 20 K/W gm 260 320 mS -IGp9.5 480 A IDp9.5 1200 A -IGp3 48 A IDp3 120 A -VGth 1.2 2.2 3.2 V IDss 360 600 840 mA Semiconductor Group 3 of 10 Draft D, September 99 CLX30 Electrical Characteristics (continued) Parameter Symbol min. Values typ. max. Unit AC Characteristics Linear power gain 1) VDS = 8 V, ID = 240 mA, f = 2.3 GHz, Pin = 4 dBm CLX30-00 CLX30-05 CLX30-10 Power output at 1dB gain compr. 1) VDS = 8 V, ID(RF off) = 240 mA, f = 2.3 GHz CLX30-00 CLX30-05 CLX30-10 Output Power 1) VDS = 8 V, ID(RF off) = 240 mA, f = 2.3 GHz, Pin = 14.5 dBm CLX30-00 CLX30-05 CLX30-10 Power added efficiency 1), 2) VDS = 8 V, ID(RF off) = 240 mA, f = 2.3 GHz, Pin = 14.5 dBm CLX30-00 CLX30-05 CLX30-10 Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC 43 46 48 48 52 54 PAE 29.0 30.0 30.5 29.5 30.3 30.8 % Pout 29.5 30.3 30.8 dBm P1dB 16.5 17.0 17.0 17.5 18.0 18.0 dBm Glp dB Semiconductor Group 4 of 10 Draft D, September 99 CLX30 Typical Common Source S-Parameters V DS = 3 V, I D = 240 mA, Z o = 50 f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [magn] 0,899 0,882 0,869 0,864 0,863 0,863 0,862 0,862 0,862 0,862 0,862 0,862 0,862 0,862 0,862 0,862 0,862 0,863 0,862 0,863 0,862 0,863 0,863 0,863 0,863 0,863 0,863 0,863 0,863 0,863 0,862 0,862 0,863 0,863 0,863 0,863 0,863 0,863 0,862 0,861 0,861 0,861 0,862 0,864 0,866 0,866 0,865 0,863 0,857 0,849 0,837 0,824 0,809 0,791 0,769 0,745 0,722 0,702 0,687 0,678 Semiconductor Group 5 of 10 Draft D, September 99 CLX30 Typical Common Source S-Parameters (continued) V DS = 5 V, I D = 240 mA, Z o = 50 f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,902 0,885 0,873 0,867 0,865 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,864 0,865 0,865 0,866 0,866 0,866 0,870 0,874 0,878 0,880 0,882 0,882 0,882 0,881 0,881 0,881 0,880 0,881 0,882 0,883 0,883 0,883 0,882 0,876 0,868 0,857 0,846 0,832 0,815 0,794 0,769 0,745 0,729 0,719 0,714 Semiconductor Group 6 of 10 Draft D, September 99 CLX30 Typical Common Source S-Parameters (continued) V DS = 8 V, I D = 240 mA, Z o = 50 f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,899 0,885 0,874 0,869 0,868 0,868 0,868 0,868 0,869 0,869 0,870 0,870 0,870 0,871 0,871 0,871 0,871 0,872 0,872 0,872 0,872 0,873 0,873 0,873 0,874 0,874 0,875 0,875 0,876 0,876 0,877 0,880 0,884 0,889 0,892 0,894 0,894 0,895 0,894 0,894 0,894 0,895 0,896 0,897 0,898 0,899 0,898 0,896 0,891 0,883 0,871 0,859 0,847 0,828 0,807 0,786 0,764 0,751 0,747 0,744 Semiconductor Group 7 of 10 Draft D, September 99 CLX30 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CLX30- (nn) (ql) (nn): Output Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62702L114 CLX30-10 ES For CLX30; Output Power Level 10 (Pout>30.5 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.infineon.de/semiconductor/products/35/353.htm Please contact also our marketing division : Tel.: Fax.: Address: ++89 234 24480 ++89 234 28438 e-mail: martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 8 of 10 Draft D, September 99 CLX30 MWP-25 Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. 1 2 3 The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 9 of 10 Draft D, September 99 |
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